III-Nitride Semiconductor Materials |
by Zhe Chuan Feng (ed) |
2006 (442 pages) |
ISBN:9781860946363 |
Written by renowned experts, this valuable resource covers the most important topics and achievements in recent years, discusses progress made by different groups, and suggests future directions. |
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Table of Contents
III-Nitride Semiconductor Materials |
Preface |
Chapter 1 |
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Hydride Vapor Phase Epitaxy of Group III Nitride Materials |
Chapter 2 |
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Planar MOVPE Technology for Epitaxy of III-Nitride Materials |
Chapter 3 |
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Close-Coupled Showerhead MOCVD Technology for the Epitaxy of GaN and Related Materials |
Chapter 4 |
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Molecular Beam Epitaxy for III-N Materials |
Chapter 5 |
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Growth and Properties of Nonpolar Gan Films and Heterostructures |
Chapter 6 |
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Indium-Nitride Growth by High-Pressure CVD: Real-Time and Ex-Situ Characterization |
Chapter 7 |
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A New Look on InN |
Chapter 8 |
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Growth and Electrical/Optical Properties of AlxGa1-xN in the Full Composition Range |
Chapter 9 |
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Optical Investigation of InGaN/GaN Quantum Well Structures Grown by MOCVD |
Chapter 10 |
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Clustering Nanostructures and Optical Characteristics in Ingan/Gan Quantum-Well Structures with Silicon Doping |
Chapter 11 |
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III-Nitrides Micro-and Nano-Structures |
Chapter 12 |
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New Developments in Dilute Nitride Semiconductor Research |
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