SiC Materials and Devices, Volume 2

SiC Materials and Devices, Volume 2 (Volume Set)

by Michael Shur, Sergey Rumyantsev and Michael Levinshtein (eds)

2007 (143 pages)

ISBN:9789812703835

Reviewing state-of-the-art areas in SiC technology and materials and device research, this text explores the growth of SiC substrates; deep defects in different SiC polytypes; recent work on SiC JFETs; and complex, controversial issues in bipolar devices.

SiC Materials and Devices, Volume 2

Preface

Growth of SiC Substrates

Deep Level Defects in Silicon Carbide

Silicon Carbide Junction Field Effect Transistors

SiC BJTs