The Physics and Modeling of MOSFETS: Surface-Potential Model HiSIM | by Mitiko Miura-Mattausch, Hans Jürgen Mattausch and Tatsuya Ezaki | ISBN: 9789812568649. Electronic Books. Semiconductor Device Physics. MOS transistor models

November 26, 2009 by kutenk
Filed under: Engineering Books 

The Physics and Modeling of MOSFETS: Surface-Potential Model HiSIM

by Mitiko Miura-Mattausch, Hans Jürgen Mattausch and Tatsuya Ezaki
ISBN:9789812568649

Providing a timely description of the latest compact MOS transistor models for circuit simulation, this book considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel.

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The Physics and Modeling of MOSFETS—Surface-Potential Model HiSIM







Foreword
Preface
Definition of Symbols Used for Variables and Constants
Chapter 1 – Semiconductor Device Physics



1.1: Band Structure Concept
1.2: Carrier Density and Fermi Level in Semiconductors
1.3: P-N Junction
1.4: Device Simulation
1.5: Summary of Equations and Symbols Presented in Chapter 1 for Semiconductor Device Physics
Bibliography

Chapter 2 – Basic Compact Surface-Potential Model of the MOSFET
2.1: Compact Modeling Concept
2.2: Device Structure Parameters of the MOSFET
2.3: Surface Potentials
2.4: Charge Densities
2.5: Drain Current
2.6: Summary of Equations and Model Parameters Presented in Chapter 2 for Basic Compact Surface-Potential Model of the MOSFET
Bibliography




Chapter 3 – Advanced MOSFET Phenomena Modeling
3.1: Threshold Voltage Shift
3.2: Depletion Effect of the Poly-Si Gate
3.3: Quantum-Mechanical Effects
3.4: Mobility Model
3.5: Channel-Length Modulation
3.6: Narrow-Channel Effects
3.7: Effects of the Length of the Diffused Source/Drain Contacts in Shallow-Trench Isolation (STI) Technologies
3.8: Temperature Dependences
3.9: Conservation of Symmetry at Vds = 0
3.10: Harmonic Distortions
3.11: Summary of Equations and Model Parameters Appearing in Chapter 3 for Advanced MOSFET Phenomena Modeling
Bibliography

Chapter 4 – Capacitances
4.1: Intrinsic Capacitances
4.2: Overlap Capacitances
4.3: Longitudinal (Lateral) -Field-Induced Capacitance
4.4: Fringing Capacitance
4.5: Summary of Equations and Model Parameters Appearing in Chapter 4 for Capacitances
Bibliography

Chapter 5 – Leakage Currents and Junction Diode
5.1: Leakage Currents
5.2: Bulk/Source and Bulk/Drain Junction Models
5.3: Summary of Equations and Model Parameters Appeared in Chapter 5 for Leakage Currents and Junction Diode
Bibliography

Chapter 6 – Modeling of Phenomena Important for RF Applications
6.1: Noise Models
6.2: Non-Quasi-Static (NQS) Model
6.3: External MOS Transistor Resistances
6.4: Summary of Equations and Model Parameters Appeared in Chapter 6 for Modeling of Phenomena Important for RF Applications
Bibliography

Chapter 7 – Summary of HiSIM’s Model Equations, Parameters, and Parameter-Extraction Method
7.1: Model Equations of HiSIM
7.2: Model Flags and Exclusion of Modeled Effects
7.3: Model Parameters and their Meaning
7.4: Default Values of the Model Parameter
7.5: Parameter Extraction Method
Bibliography

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