Properties of Crystalline Silicon | by Robert Hull (ed) | ISBN: 9780863415562. Implantation/Irradiation of Silicon. Silicon on Insulator Technology. Silicide Technologies
Properties of Crystalline Silicon
by Robert Hull (ed)
ISBN:9780863415562
Comprised of tables, graphs, diagrams, photographs and illuminative text, this unique reference brings together contributions from a worldwide group of experts covering a broad spectrum from silicon physics and material properties to device technology.
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Properties of Crystalline Silicon
Foreword
Introduction
Abbreviations
Chapter 1 – Melt Growth
1.1: Si melt: Density, Surface Tension and Viscosity
1.2: Si melt Convection in a Crucible
1.3: Si Melt Growth: Segregation of Light Elements, Dopants and Heavy Metals
1.4: Si Melt Growth: Oxygen Transportation During Czochralski Growth
1.5: Si Melt Growth: Concentrations and Diffusivities of Vacancies and Interstitials
1.6: Si Melt Growth: Grown-In Defects and Simulation of Their Formation
Chapter 2 – Epitaxial Growth
2.1: c-Si MBE: Sources, Doping, Growth Rates, Uniformity
2.2: Gas-Source MBE of c-Si and Related Materials
2.3: UHV/CVD and Related Growth Techniques for Si and Other Materials
Chapter 3 – Structural and Mechanical Properties
3.1: Diamond Cubic Si: Structure, Lattice Parameter and Density
3.2: Elastic Constants and Moduli of Diamond Cubic Si
3.3: High Pressure Phases of c-Si
3.4: Core Structures and Energies of Dislocations in Si
3.5: Dislocation Mobilities in c-Si
3.6: Macroscopic Mechanical Behaviour of Si at High Temperature
3.7: Mechanical Behaviour of Si at Low Tempeature
3.8: Fracture and Brittle-Ductile Transition in Si
Chapter 4 – Thermal Properties
4.1: Specific Heats of c-Si and Molten Si
4.2: Thermal Expansion Coefficients of c-Si
4.3: Melting Points of Si
4.4: Phonon Spectrum of c-Si
4.5: Thermal Conductivity of c-Si
4.6: Thermal Diffusivity of c-Si
4.7: Surface Tension of Liquid Si
4.8: Heat of Fusion of Si
Chapter 5 – Surface Properties and Cleaning
5.1: Reconstruction of Silicon (001), (111) and (110) Surfaces
5.2: Structure of Clean Silicon Surfaces: Vicinal Si(001) and Si(111) Surfaces
5.3: Electronic Structure of c-Si Surfaces
5.4: Electrical Characterisation of c-Si Surfaces
5.5: Passivation of c-Si Surfaces
5.6: Wet Chemical Cleaning and Surface Preparation of Si
5.7: HF Vapour Cleaning of Oxide on c-Si
5.8: Plasma and Other in Situ Approaches to Cleaning of c-Si Surfaces
Chapter 6 – Structural Modelling
6.1: Approximate and Parametrised Quantum Chemical Methods for Structural Modelling of c-Si
6.2: Approximate and Parametrised Quantum Mechanical Methods for Structural Modelling of c-Si: The Tight Binding Approximation
6.3: Electronic Structure Calculations of Oxygen Point Defects in c-Si
6.4: Theoretical Modelling of Minor Impurities in c-Si
6.5: c-Si Surfaces – Review of Theoretical Studies
6.6: Microscopic Modelling of Grain Boundaries and Stacking Faults in c-Si
6.7: Vacancy Defects in c-Si: Electronic and Ionic Structures
6.8: Self-Interstitials in c-Si: Structure and Migration Mechanisms
6.9: Ab Initio Modelling Techniques Applied to c-Si
6.10: Modelling of Dislocations in c-Si
Chapter 7 – Band Structure
7.1: Band Structure of Si: Overview
7.2: Calculational Methods for Determining the Band Structure of Bulk c-Si
7.3: Spin-Orbit Splitting in Bulk c-Si
7.4: Variation of Bandgap with Temperature in c-Si
7.5: Variation of Bandgap with Doping in c-Si
7.6: Variation of Bandgap with Pressure in Bulk c-Si
7.7: Band Structure and Bandgaps in Strained Bulk c-Si
7.8: Effective Masses of Electrons and Holes in c-Si
Chapter 8 – Electrical Properties
8.1: Resistivity and Carrier Concentrations of Doped c-Si, and Sheet Resistance of Ion-Implanted Bulk Si
8.2: Piezoresistance of c-Si
8.3: Electron Mobility, Diffusion and Lifetime In c-Si
8.4: Hole Mobility, Diffusion and Lifetime in c-Si
8.5: Carrier Ionization: Field, Temperature and Orientation Dependence
8.6: Modelling Equations and Parameters for Numerical Simulation
Chapter 9 – Impurities in Silicon
9.1: Diffusion of O in c-Si
9.2: Segregation Coefficient of O in c-Si
9.3: Solubility of O in c-Si
9.4: O-Related IR Absorption in c-Si
9.5: Precipitation, Segregation and IR Absorption of O in c-Si
9.6: Segregation Coefficient, Solubility and IR Absorption of C in c-Si
9.7: Diffusion of C in c-Si
9.8: Hydrogen Diffusion and Solubility in c-Si
9.9: Hydrogen-Containing Point Defects in c-Si
9.10: Nitrogen in c-Si
9.11: Solubility and Diffusion of Transition Metal Impurities in c-Si
9.12: Deep Levels of Transition Metal Impurities in c-Si
9.13: Electronic States of Chalcogen-Related Donors in c-Si
9.14: Properties of Rare-Earth Doped c-Si
9.15: Alkali Impurities (Na, K, Li) in c-Si
Chapter 10 – Dopants in Silicon
10.1: Diffusion of Al, Ga, In and Tl in c-Si
10.2: Diffusion of P, As and Sb in c-Si
10.3: Boron-Interstitial Clustering in c-Si
10.4: Solubility of B, Al, Ga, In, Tl, P, As and Sb in c-Si
10.5: Ion Implantation of B and P in c-Si
Chapter 11 – Defect Levels in Silicon
11.1: Vacancies and Interstitials and Their Interactions with Impurities in c-Si
11.2: Electrical and Optical Properties of Dislocations in c-Si
11.3: Shallow Thermal Donors in c-Si
11.4: Thermal Double Donors in c-Si
11.5: Double Donors and Acceptors in c-Si
Chapter 12 – Optical Properties
12.1: Optical Properties of c-Si: General Aspects
12.2: Optical Functions of Intrinsic c-Si for Photon Energies Up to 7.5 eV: Table
12.3: Optical Functions of Intrinsic c-Si for Selected Photon Energies: Table
12.4: Optical Functions of Liquid Si
Chapter 13 – Photoconductivity and Photogenerated Carriers
13.1: Photoconductivity of c-Si: General Remarks
13.2: Photoconductivity Spectra of Ion-Implanted c-Si
13.3: Photoconductivity Spectra of Electron Irradiated c-Si
13.4: Bulk Lifetimes of Photogenerated Carriers in Intrinsic c-Si
13.5: Bulk Lifetimes of Photogenerated Carriers in Doped and Treated c-Si
13.6: Surface Recombination Velocity in c-Si
13.7: Mobility and Diffusion of Photogenerated Carriers in Intrinsic c-Si
13.8: Mobility and Diffusion of Photogenerated Carriers in Doped and Treated c-Si
Chapter 14 – Implantation/Irradiation of Silicon
14.1: Ion Implantation Range Theory
14.2: Ion Implantation into c-Si: Basic Mechanisms and Modelling
14.3: Electrical Properties of Ion Implanted and Electron Irradiated c-Si
14.4: Structure of Ion Implantation Induced Defects in c-Si
14.5: Energy Levels, Structure and Properties of Point Defects Induced by Ion Implantation and Electron Irradiation of c-Si
14.6: Dopant Ionization Energies in c-Si
Chapter 15 – Gettering
15.1: Gettering of Transition Metals in c-Si: Gettering in Silicon Technology
15.2: Gettering of Transition Metals in c-Si: Gettering Mechanisms
15.3: Gettering of Transition Metals in c-Si: Gettering Techniques
15.4: Gettering of Transition Metals in c-Si: Summary of Current State of Understanding
15.5: Gettering of Transition Metals in c-Si: Future Trends
References for Chapter 15: Gettering of Transition Metals in c-Si
Chapter 16 – Etching
16.1: Silicon Wet Isotropic Etch Rates
16.2: Silicon Wet Orientation-Dependent (Anisotropic) Etch Rates
16.3: Silicon Preferential (Defect Delineation) Etch Rates
16.4: Silicon Plasmaless Gas-Phase Etch Rates
16.5: Slicon Sputtering and Ion Milling Etch Rates
16.6: Silicon Chemical Plasma and Reactive Ion (RIE) Etch Rates
16.7: Silicon Reactive-Ion-Beam and Ion-Beam-Assisted Etch Rates
16.8: Silicon Laser-Assisted Etch Rates
Chapter 17 – Metal-Silicon Contacts
17.1: Recent Advances in Silicide Technologies
17.2: Epitaxial Silicide Contacts
Chapter 18 – Silicon on Insulator Technology
18.1: Overview of SOI
18.2: Silicon on Sapphire
18.3: Physics and Chemistry of Silicon Wafer Bonding
18.4: Bond, Grindback and Polish SOI
18.5: Bond and etchback SOI
18.6: Hydrogen-Induced Exfoliation of c-Si
18.7: Diffusion in SOI Material
18.8: Bond and Etchback SOI Using an Epitaxial Layer Over Porous Silicon
18.9: Technology and Properties of SIMOX
18.10: Comparison of Properties of Available SOI Materials
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